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t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 1 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? test equipment ? electronic warfare ? m ilitary radar general description triquints tga2 214 is a wideband power amplif ier fabricated on triquints tqgan15 gan on sic process . the TGA2214 operates from 2 C 18 ghz and achieves 5 w of saturated output power with 14 db of large signal gain and greater than 20% power - added efficiency . this combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. the TGA2214 is matched to 50 ? with integrated dc blocking capacitors on both rf ports s implifying system integration ; i t is ideally suited for electronic warfare, test instrumentation and radar applications across both military and commercial markets. lead free and rohs compliant. evaluation boards are available upon request. functional block diagram p ad configuration p ad no. symbol 1 rf in 2 v g 1 3 v g 2 4 rf out 5 v d 2 6 v d 1 product features ? frequency range: 2 - 18 ghz ? pou t: > 3 7 dbm at p in = 23 dbm ? pae: > 20 % at pin = 23 dbm ? large signal gain (pin = 23 dbm) : > 1 4 db ? small signal gain: > 22 db ? return loss: > 7 db ? bias: v d = 22 v, i dq = 45 0 ma, v g = - 2. 3 v typical ? chip dimensions: 3 x 5 x 0.10 mm ? performance under cw operation ordering information part eccn description tg a2 214 3a001.b.2.c 2 - 18 ghz 5w gan power amplifier 5 3 6 4 2 1
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 2 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 23 v gate voltage range (v g ) - 5 to 0 v drain current - 1 st stage (i d1 ) - 2 nd stage (i d2 ) 0.5 a 1.0 a gate current at tch = 200 c - 1 st stage (i g1 ) - 2 nd stage (i g2 ) 85 c: - 1.0 to 7 ma 85 c: - 2.6 to 24 ma power dissipation ( p diss ) , 85c 30 w input power, cw, 50 , 85 c (p in ) 31 dbm input power, cw, vswr 3:1 , 85 c (p in ) 31 dbm channel temp erature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature - 55 t o 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage ( v d ) cw 2 2 v drain current ( i dq ) 450 ma drain current under rf drive (i d_drive ) see plots p. 7 gate voltage (v g ) ? 2. 3 v (typ.) gate current under rf drive (i g_drive ) see plots p. 7 temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted : 25 c, v d = 2 2 v, i dq = 45 0 ma, v g = ? 2. 3 v typ , cw. parameter min typical max units operational frequency range 2 18 ghz small signal gain > 22 db input return loss > 7 db output return loss > 8 db output power @ pin = 23 dbm > 3 7 dbm power added efficiency @ pin = 23 dbm > 20 % large signal gain @ pin = 23 dbm > 14 db im3 (pout/tone = 31 dbm/tone , 100 mz spacing ) - 20 dbc im5 (pout/tone = 31 dbm/tone , 100 mz spacing ) - 33 dbc small signal gain temperature coefficient - 0.0 4 db/ c output power temperature coefficient - 0.0 08 db m / c recommended operating voltage 22 22 v
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 3 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c, v d = 2 2 v (cw) at freq = 9.5 ghz, p in = 23 dbm: i dq = 45 0 ma, i d_drive = 1.28 a p out = 38.5 dbm , p diss = 21 w 7 c /w channel temperature (t ch ) (under rf drive) 2 32 c median lifetime (t m ) 5.0 e+7 hrs notes: 1. thermal resist ance measured to back of carrier plate. mmic mounted on 20 mils cumo carrier using 1.5 mil 80/20 ausn. test conditions: v d = 22 v; failure criteria = 10% reduction in i d_max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 16 10 12 14 16 18 20 22 24 2 4 6 8 10 12 14 16 18 p diss (w) input power (dbm) dissipated power vs. freq. vs. temp. temp = 25 c pin = 23 dbm, cw 25 c 85 c - 40 c
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 4 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : small signal condition s unless otherwise specified : v d = 22 v, i dq = 4 5 0 ma, v g = - 2. 3 v , cw. 18 20 22 24 26 28 30 1 3 5 7 9 11 13 15 17 19 s21 (db) frequency (ghz) gain vs. frequency vs. temperature - 40 c 25 c 85 c 18 20 22 24 26 28 30 1 3 5 7 9 11 13 15 17 19 s21 (db) frequency (ghz) gain vs. frequency vs. drain current 225 ma 450 ma -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 17 19 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. - 40 c 25 c 85 c -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 17 19 s11 (db) frequency (ghz) input return loss vs. freq. vs. drain current 225 ma 450 ma -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 17 19 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. - 40 c 25 c 85 c -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 17 19 s22 (db) frequency (ghz) output return loss vs. freq. vs. i d 225 ma 450 ma
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 5 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition s unless otherwise specified : v d = 22 v, i dq = 450 ma, v g = - 2.3 v, cw . 28 30 32 34 36 38 40 8 12 16 20 24 28 output power (dbm) input power (dbm) output power vs. input power vs. temp. frequency = 10 ghz 25 c 85 c - 40 c 28 30 32 34 36 38 40 8 12 16 20 24 28 output power (dbm) input power (dbm) output power vs. input power vs. freq. temp = 25 c temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz 18ghz 35 36 37 38 39 40 2 4 6 8 10 12 14 16 18 output power (dbm) frequency (ghz) output power vs. frequency vs. v d temp = 25 c, pin = 23 dbm 22 v 20 v 35 36 37 38 39 40 2 4 6 8 10 12 14 16 18 output power (dbm) frequency (ghz) output power vs. frequency vs. temp. p in = 23 dbm 25 c 85 c - 40 c 35 36 37 38 39 40 2 4 6 8 10 12 14 16 18 output power (dbm) frequency (ghz) output power vs. frequency vs. i dq p in = 23 dbm, temp = 25 c 450 ma 225 ma
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 6 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition s unless otherwise specified : v d = 22 v, i dq = 450 ma, v g = - 2.3 v, cw . 5 7 9 11 13 15 17 19 21 23 25 8 12 16 20 24 28 power added efficiency (%) input power (dbm) pae vs. input power vs. freq. temp = 25 c temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz 18ghz 15 18 21 24 27 30 2 4 6 8 10 12 14 16 18 power added efficiency (%) frequency (ghz) pae vs. frequency vs. v d p in = 23 dbm, temp = 25 c 22 v 20 v 15 18 21 24 27 30 2 4 6 8 10 12 14 16 18 power added efficiency (%) frequency (ghz) pae vs. frequency vs. temp. p in = 23 dbm 25 c 85 c - 40 c 10 12 14 16 18 20 22 24 26 8 12 16 20 24 28 gain (db) input power (dbm) power gain vs. input power vs. freq. temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz 18ghz 10 12 14 16 18 20 22 24 26 8 12 16 20 24 28 gain (db) input power (dbm) power gain vs. input power vs. temp. frequency = 10 ghz 25 c 85 c - 40 c 12 13 14 15 16 17 18 2 4 6 8 10 12 14 16 18 gain (db) frequency (ghz) power gain vs. frequency vs. v d p in = 23 dbm, temp = 25 c 22 v 20 v
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 7 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 22 v, i dq = 450 ma, v g = - 2.3 v, cw . 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d p in = 23 dbm, temp = 25 c 22 v 20 v 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. p in = 23 dbm 25 c 85 c - 40 c 0 2 4 6 8 10 12 14 16 18 20 8 12 16 20 24 28 gate current (ma) input power (dbm) gate current vs. input power vs. freq. temp = 25 c 10 ghz 14ghz 6 ghz 18ghz 2 ghz 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 2 4 6 8 10 12 14 16 18 drain current (a) frequency (ghz) drain current vs. frequency vs. v d p in = 23 dbm, temp = 25 c 22 v 20 v 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 2 4 6 8 10 12 14 16 18 drain current (a) frequency (ghz) drain current vs. frequency vs. temp. p in = 23 dbm 25 c 85 c - 40 c 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 8 12 16 20 24 28 drain current (a) input power (dbm) drain current vs. input power vs. freq. temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz 18ghz
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 8 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal and l inearity condition s unless otherwise specified : v d = 22 v, i dq = 450 ma, v g = - 2.3 v, cw . -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency 100 mhz tone spacing, temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz 18ghz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency 100 mhz tone spacing, temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz 18ghz -40 -35 -30 -25 -20 -15 -10 -5 0 2 4 6 8 10 12 14 16 18 im (dbc) frequency (ghz) intermodulation distortion vs. frequency pout/tone = 31 dbm, 100 mhz tone spacing temp = 25 c im5 im3 -70 -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 3f 0 output power (dbc) fundamental output power (dbm) 3 rd harmonic vs. output power vs. freq. temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz -45 -40 -35 -30 -25 -20 -15 -10 -5 0 15 20 25 30 35 40 2f 0 output power (dbc) fundamental ouptut power (dbm) 2 nd harmonic vs. output power vs. freq. temp = 25 c 10 ghz 14ghz 6 ghz 2 ghz
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 9 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application circuit bias - up procedure 1. set i d limit to 1. 4 a, i g limit to 20 ma 2. apply ?5 v to v g 3. apply +2 2 v to v d ; ensure i dq is approx. 0 ma 4. adjust v g until i dq = 4 5 0 ma (v g ~ ? 2. 3 v typ.). 5. turn on rf supply bias - down procedure 1. turn off rf supply 2. reduce v g to ?5 v; e nsure i dq is approx. 0 ma 3 . set v d to 0 v 4 . turn off v d supply 5. turn off v g supply v g2 r2 10 ohms c6 10 f v d2 10000 pf c4 100 pf 10000 pf c3 100 pf r1 10 ohms c5 10 f v g1 rf in rf out r3 10 ohms c7 10 f c1 1000 pf v d1 r4 10 ohms c8 10 f c2 1000 pf v d v g
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 10 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing mmic bonding detail: bill of material reference des. value description manuf. part number c1, c2 1000 pf cap, 50v, 10%, slcc presidio msa3535b102k2h5c - f c3, c4 100pf // 10000pf cap, 50v, 20%, x7r, mlcc presidio mvb3030x103m2h5c1f c5, c6, c7, c8 10 ? f cap , 1206, 20%, 50v, x5r various r1, r2, r3, r4 10 ohms res , 0402, 5% various v g2 v g1 v d2 v d1 c5 r1 c6 r2 c1 r3 c8 r4 c2 c4 c3 rf_in rf_out
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 11 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information units: millimeters thickness: 0.10 die x,y size tolerance: 0.050 ground is backside of die pad description p ad n o. symbol description 1 rf in in put; matched to 50 ; dc blocked 2, 3 v g (1) gate voltage; bias network is required; see recommended application information above. 4 rf out out put; matched to 50 ; dc blocked 5 , 6 v d (2) drain voltage; bias network is required; see recommended application information above. notes: 1. pads 2 & 3 may be tied together off - chip. 2. pads 5 & 6 may be tied together off - chip.
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 12 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? a n alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
t ga 2214 2 to 18 ghz 5w gan power amplifier preliminary datasheet: 01 - 26 - 15 - 13 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability use ausn (80/2 0) solder and limit exposure to temperatures above 300 ? roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? eccn us department of commerce : 3a001.b.2.c contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or aut horized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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